<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dcterms="http://purl.org/dc/terms/">
<rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/6854">
    <dcterms:title><![CDATA[<strong>Green solution synthesis of Bi19S27I3 nanostructures: engineering their morphology through polyethylene glycol and their use in the photocatalytic reduction of Cr(vi)</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[NANOTECNOLOGIA]]></dcterms:subject>
    <dcterms:subject><![CDATA[CROMO]]></dcterms:subject>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[2024]]></dcterms:subject>
    <dcterms:abstract><![CDATA[Bismuth-based chalcohalides have garnered significant attention over the past five years due to their promising optoelectronic properties, and applicability in photodetection, ionizing radiation detection, photocatalysis, and solar cells. Among these compounds, Bi19S27I3 stands out as a novel material with relatively unexplored synthesis and properties. In this study, we introduce a green synthesis approach for Bi19S27I3 nanostructures, employing the hot injection method under mild conditions with water as the solvent. By utilizing polyethylene glycol (PEG) as a capping agent with molar proportions [PEG : Bi] 0.5 : 1, 1 : 1 and 2 : 1 and adjusting the reaction time (5 min or 270 min), we successfully controlled the morphology, yielding either round nanoparticles, nanorolls, or a combination of both. For instance, longer reaction times such as 270 min enhance the crystallinity of the material and also encourage morphology uniformity, while PEG favors a rounded morphology. Our findings underscore the significant capping effect of PEG, particularly evident in the photocatalytic activity of Bi19S27I3 towards Cr(VI) reduction. Through this facile and efficient synthesis strategy, we tailored the morphology of Bi19S27I3 and demonstrated its efficacy in Cr(VI) photocatalysis, achieving a remarkable 91% reduction for the nanoroll-based sample with PEG: Bi [1 : 1]. This innovative approach not only provides an environmentally friendly method for synthesizing Bi19S27I3 but also highlights its potential as an effective photocatalyst for environmental remediation.]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<strong>Mombr&uacute;-Frutos, Maia Ivana</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Viera, Martina</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Grosso, Carolina</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Rodriguez Chialanza, Mauricio</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Fornaro, Laura</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>P&eacute;rez Barthaburu, Mar&iacute;a Eugenia</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Aguiar, Ivana</strong>]]></dcterms:creator>
    <dcterms:source><![CDATA[Journal of Materials Chemistry C, v. 12, n&ordm; 41, 2024. -- pp. 16843-16853]]></dcterms:source>
    <dcterms:publisher><![CDATA[Royal society of Chemistry]]></dcterms:publisher>
    <dcterms:date><![CDATA[2024]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong>La legislaci&oacute;n uruguaya protege el derecho</strong>&nbsp;de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes (LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA -</strong>&nbsp;La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:extent><![CDATA[11 p.]]></dcterms:extent>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Art&iacute;culo]]></dcterms:type>
    <dcterms:identifier><![CDATA[10.1039/D4TC01480D]]></dcterms:identifier>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/4564">
    <dcterms:title><![CDATA[<strong>The role of interstitial native defects in the topological insulator Bi2Se3</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[SELENIO]]></dcterms:subject>
    <dcterms:subject><![CDATA[SEMICONDUCTORES]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[2016]]></dcterms:subject>
    <dcterms:abstract><![CDATA[Bi2Se3 is a prominent narrow gap semiconductor with a rhombohedral crystal structure and potential applications in thermoelectric and spintronic technologies. Its electrical conduction is ruled by native point defects inducing an n-type degenerate behavior. Here, we present a first principles study of the point defects in Bi2Se3, focusing on the relevance of the interstitial sites. A density functional methodology was employed with van der Waals correction and spin&ndash;orbit coupling in order to achieve a better description of the defects. The results indicate that interstitial Bi atoms in octahedral sites between two consecutive quintuple layers have a lower formation energy than selenium vacancies and that these interstitials could act as a possible source of free electron carriers. In addition, we show that the utilization of an experimental or strained lattice constant in the calculations may lead to an under- or overestimation of the defect formation energies.]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<strong>Tumelero, Milton A</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<a title="Curriculum Vitae" href="http://buscadores.anii.org.uy/buscador_sni/exportador/ExportarPdf?hash=fc7cd71892b1a9968ee19230dafdbd01" target="_blank"><strong>Faccio, Ricardo</strong></a>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Pasa, Andr&eacute; A</strong>]]></dcterms:creator>
    <dcterms:source><![CDATA[Journal of Physics: Condensed Matter&nbsp; v. 28, no. 42, 2016. -- 5p. -- e425801]]></dcterms:source>
    <dcterms:publisher><![CDATA[IOPScience]]></dcterms:publisher>
    <dcterms:date><![CDATA[2016]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong> La legislaci&oacute;n uruguaya</strong> protege el derecho de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes (LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA -</strong> La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Art&iacute;culo]]></dcterms:type>
    <dcterms:identifier><![CDATA[DOI: 10.1088/0953-8984/28/42/425801]]></dcterms:identifier>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/4398">
    <dcterms:title><![CDATA[<strong>Electrodeposition and ab Initio Studies of Metastable Orthorhombic Bi2Se3 : A Novel Semiconductor with Bandgap for Photovoltaic Applications</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[SEMICONDUCTORES]]></dcterms:subject>
    <dcterms:subject><![CDATA[ANTIMONIO]]></dcterms:subject>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[2016]]></dcterms:subject>
    <dcterms:abstract><![CDATA[A metastable phase of Bi2Se3 with orthorhombic structure has been obtained by potentiostatic electrodeposition onto Si(100) substrate. The ideal stoichiometry and single orthorhombic phase could be obtained only within a restricted potential window, where mutual underpotential co-deposition is assumed to occur. Optical and electrical characterization indicates a bandgap of 1.25 eV, close to the maximum efficiency in the Shockley&ndash;Queisser limit, and n-type semiconducting behavior with moderate electrical resistivity. Theoretical calculations using density functional theory were used to support the structural and optical results. Due to the favorable set of properties with respect to isomorphic compounds such as Bi2S3, Sb2S3, and Sb2Se3, this material could lead to efficient and low-cost new thin film-based photovoltaic device]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<strong>Tumelero, M. A.</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Benetti, L. C.</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Isoppo, E.</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<a title="Curriculum Vitae" href="http://buscadores.anii.org.uy/buscador_sni/exportador/ExportarPdf?hash=fc7cd71892b1a9968ee19230dafdbd01" target="_blank"><strong>Faccio, Ricardo</strong></a>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Zangari, G.</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Pasa, A. A.</strong>]]></dcterms:creator>
    <dcterms:source><![CDATA[Journal of Physical Chemistry C&nbsp; v. 120, 2016. -- p. 11797-11806]]></dcterms:source>
    <dcterms:publisher><![CDATA[ACS]]></dcterms:publisher>
    <dcterms:date><![CDATA[2016]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong> La legislaci&oacute;n uruguaya protege el derecho</strong> de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes (LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA -</strong> La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Art&iacute;culo]]></dcterms:type>
    <dcterms:identifier><![CDATA[DOI:10.1021/acs.jpcc.6b02559]]></dcterms:identifier>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/4059">
    <dcterms:title><![CDATA[<strong>Novel bismuth tri-iodide nanostructures obtained by the hydrothermal method and electron beam irradiation</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[SEMICONDUCTORES]]></dcterms:subject>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[RADIACION]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[RADIACION IONIZANTE]]></dcterms:subject>
    <dcterms:subject><![CDATA[2017]]></dcterms:subject>
    <dcterms:abstract><![CDATA[Bismuth tri-iodide is a layered compound semiconductor which has suitable properties as material for ionizing radiation detection devices. Monocrystals and polycrystalline thin films have been studied for this application, but only recently, the development of nanostructures of this compound has emerged as an interesting alternative for using such nanostructures in new types of radiation detectors or for including them in other applications. Considering this, we present in this work BiI<sub>3</sub> nanoparticles successfully synthesized by the hydrothermal method, using a Teflon-lined stainless steel autoclave, at a temperature of 180&nbsp;&deg;C during 8&ndash;20&nbsp;h, with BiCl<sub>3</sub> and NaI as source materials. We characterized the nanoparticles by X-ray diffraction (XRD), transmission electron microscopy (TEM) and electron dispersive spectroscopy (EDS). We obtained small rounded or hexagonal particles (10&ndash;20&nbsp;nm in size) and larger structures. The maximum orientation of the nanostructures is along the <em>(0 0 l)</em> family planes and occurs after 16&nbsp;h of synthesis, which arises as the best condition for obtaining BiI<sub>3</sub> oriented nanostructures. When a 100&nbsp;kV TEM electron beam was converged on the larger structures, we obtained highly oriented BiI<sub>3</sub> hexagonal and rod shaped nanostructures. We found that particles&rsquo; shape does not depend on the synthesis time. In addition, results were compared with the ones obtained for nanoparticles synthesized from solution. The present work is an advance in the synthesis of BiI<sub>3</sub> nanostructures by the hydrothermal method, and is also the first step on seeking the amenable control of morphology and size of such structures using electron beam irradiation. This last process may be particularly appropriate for producing nanostructures for future applications in new devices.]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<strong>Aguiar, Ivana</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Olivera, Alvaro</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Mombr&uacute;, Maia</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Bentos Pereira, Heinkel</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Fornaro, Laura</strong>]]></dcterms:creator>
    <dcterms:source><![CDATA[Journal of Crystal Growth |g v. 457, 2017. -- p. 244-249]]></dcterms:source>
    <dcterms:publisher><![CDATA[Elsevier]]></dcterms:publisher>
    <dcterms:date><![CDATA[2017]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong> La legislaci&oacute;n uruguaya protege el derecho</strong> de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes (LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA -</strong> La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Art&iacute;culo]]></dcterms:type>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/2793">
    <dcterms:title><![CDATA[<strong>Growth of bismuth tri-iodide platelests for room temperature X-ray detection.</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[RAYOS X]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[2004]]></dcterms:subject>
    <dcterms:abstract><![CDATA[Bismuth tri-iodide synthesized from bismuth subcarbonate and potassium iodide, and then purified by zone refining followed by one sublimation, was used as starting material. A first set of platelets was grown by physical vapor deposition (PVD) under argon atmosphere (7&times;104 Pa), with a source temperature of 300&deg;C and during 5-7 days. Growth temperature was at about 260&deg;C. Other set of platelets was grown by traveling molten zone (TMZ), at 460&deg;C and with a traveling speed of 5 mm/h. Platelets are up to 20&times;10 mm2 in size and from 50 to 80 &mu;m in thickness. Dendritic-like defects turned out to be the main surface defect for the PVD crystals. Some samples exhibit hexagonal microcrystals on their surface, which indicates that they grow from layers of hexagonal grains. Detectors were made with representative platelets by Pd or Au thermal deposition (contact areas of 0.03, 0.02, 0.12 cm2), Pd wire attachment with aquadag and acrylic encapsulation. TMZ crystals show a better surface crystal quality, but this fact does not seem to particularly influence the detector electrical properties. However, the metal used for electrode deposition determines the resistivity, and Au emerges as better than Pd for this purpose. Detector X-ray response was measured by irradiation with a 241Am source of 3.5 mR/h. Resistivities up to 2.0&times;1012 &Omega;&middot;cm were obtained, the best reported for detectors made with monocrystals of this material, which correlates with the fact that these detectors are the first BiI3 ones that respond to an X-ray moderate radiation exposure. Platelets obtained in the present work give detector but not spectrometric grade material.]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<a title="Curriculum" href="http://buscadores.anii.org.uy/buscador_sni/exportador/ExportarPdf?hash=7b9bf747fb311cff42d0d079ef90c05f"><strong>Fornaro, Laura</strong></a>]]></dcterms:creator>
    <dcterms:source><![CDATA[IEEE Transactions on Nuclear Science v. 51, no. 5 pt. 1, 2004. -- p. 2461-2465]]></dcterms:source>
    <dcterms:publisher><![CDATA[IEEE]]></dcterms:publisher>
    <dcterms:date><![CDATA[2004]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong>La legislaci&oacute;n uruguaya</strong> protege el derecho de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes</p>
<p>(LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA</strong> - La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Art&iacute;culo]]></dcterms:type>
    <dcterms:identifier><![CDATA[DOI: 10.1109/TNS.2004.836144]]></dcterms:identifier>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/2769">
    <dcterms:title><![CDATA[<strong>Growth of bismuth tri-iodide platelets by the physical vapor deposition method.</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[CRISTALOGRAFIA]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[2004]]></dcterms:subject>
    <dcterms:abstract><![CDATA[The work reports the growth of single BI3 crystals with platelets habit. Platelets were grown by physical vapor deposition (PVD) in a high vacuum atmosphere and with argon, polymer or iodine as additives. Crystals grew in the zone of maximum temperature gradient, perpendicular to the ampoule wall. Crystals grown with argon as additive show a very shining surface, have hexagonal (0 0 l) faces, sizes up to 20 x 10 mm2 and thicknesses up to 100 &mu;m. They were characterized by optical microscopy and scanning electron microscopy (SEM). Dendritic-like structures were found to be their main surface defect. SEM indicates that they grow from the staking of hexagonal unities. Electrical properties of the crystals grown under different growth conditions were determined. Resistivities up to 2 x 1012 &Omega;cm (the best reported value for monocrystals of this material) were obtained. X-ray response was measured by irradiation of the platelets with a 241Am source of 3.5 mR/h. A comparison of results according to the growth conditions was made. Properties of the crystals grown by this method are compared with the ones measured for others previously grown from the melt. Also, results for bismuth tri-iodide platelets are compared with the ones obtained for mercuric and lead iodide platelets.]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<strong>Cu&ntilde;a, A</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Noguera, A.</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Saucedo, E.</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<a title="Curriculum" href="http://buscadores.anii.org.uy/buscador_sni/exportador/ExportarPdf?hash=7b9bf747fb311cff42d0d079ef90c05f"><strong>Fornaro, Laura</strong></a>]]></dcterms:creator>
    <dcterms:source><![CDATA[Crystal Research and Technology v. 39, no. 10, 2004. -- p. 912-919]]></dcterms:source>
    <dcterms:publisher><![CDATA[Wiley]]></dcterms:publisher>
    <dcterms:date><![CDATA[2004]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong>La legislaci&oacute;n uruguaya</strong> protege el derecho de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes</p>
<p>(LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA</strong> - La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Art&iacute;culo]]></dcterms:type>
    <dcterms:identifier><![CDATA[DOI: 10.1002/crat.200410276]]></dcterms:identifier>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/2768">
    <dcterms:title><![CDATA[<strong>Correlation between growth orientation and growth temperature for bismuth tri-iodide films.</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[CRISTALOGRAFIA]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[2004]]></dcterms:subject>
    <dcterms:abstract><![CDATA[This paper reports the growth of bismuth tri-iodide thick films intended for direct and digital X-ray imaging. Films were grown by the vertical physical vapor deposition method, onto glass substrates 2&Prime;x 2&Prime; in size, with gold previously deposited as rear electrode. The film thickness was up to 33 &mu;m (&plusmn;5 %). Optical microscopy and SEM were performed on the films and grain size resulted to be up to 40 &mu;m. A strong correlation was found between the microcrystals growth orientation and the growth temperature. At low temperatures, microcrystals grow with their c axis parallel to the substrate, whereas at higher temperatures, they grow with their c axis perpendicular to the substrate. The higher the growth temperature, the lower the dark current of the film, and the higher the resistivity, which was from 1013 to 1015 &Omega;cm. A sensitivity to X-rays of 6.9 nC/R.cm2 was measured irradiating the films with X-rays from a mamographer. Film properties were correlated with the growth temperature, with previous results for bismuth tri-iodide films and monocrystals and with data for films of alternative materials such as lead and mercuric iodide. (&copy; 2004 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim)]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<strong>Cu&ntilde;a, A</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Aguiar, I.</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>Gancharov, A</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<strong>P&eacute;rez, M</strong>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<a title="Curriculum" href="http://buscadores.anii.org.uy/buscador_sni/exportador/ExportarPdf?hash=7b9bf747fb311cff42d0d079ef90c05f"><strong>Fornaro, L</strong></a>]]></dcterms:creator>
    <dcterms:source><![CDATA[Crystal Research and Technology v. 39, no. 10, 2004. -- p. 899-905]]></dcterms:source>
    <dcterms:publisher><![CDATA[Wiley]]></dcterms:publisher>
    <dcterms:date><![CDATA[2004]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong>La legislaci&oacute;n uruguaya</strong> protege el derecho de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes</p>
<p>(LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA</strong> - La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Art&iacute;culo]]></dcterms:type>
    <dcterms:identifier><![CDATA[DOI: 10.1002/crat.200410274]]></dcterms:identifier>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/376">
    <dcterms:title><![CDATA[<strong>Preparaci&oacute;n : cristalizaci&oacute;n y determinaci&oacute;n de las estructuras de complejos de tiourea y bismuto</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[COMPUESTOS INORGANICOS]]></dcterms:subject>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[PRODUCTOS QUIMICOS INORGANICOS]]></dcterms:subject>
    <dcterms:subject><![CDATA[URUGUAY]]></dcterms:subject>
    <dcterms:subject><![CDATA[TESIS DE MAGISTER]]></dcterms:subject>
    <dcterms:subject><![CDATA[TESIS]]></dcterms:subject>
    <dcterms:subject><![CDATA[COMPLEJOS]]></dcterms:subject>
    <dcterms:creator><![CDATA[<strong>Mombr&uacute;, Alvaro W.</strong>]]></dcterms:creator>
    <dcterms:publisher><![CDATA[Facultad de Qu&iacute;mica]]></dcterms:publisher>
    <dcterms:publisher><![CDATA[UdelaR]]></dcterms:publisher>
    <dcterms:date><![CDATA[1991]]></dcterms:date>
    <dcterms:contributor><![CDATA[Dr. Mariezcurrena, Raúl A.(Director de Tesis)]]></dcterms:contributor>
    <dcterms:rights><![CDATA[<p><em><strong>Informaci&oacute;n sobre Derechos de Autor</strong></em></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><em><strong> La legislaci&oacute;n uruguaya</strong> </em>protege el derecho de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes (LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><em><strong>ADVERTENCIA -</strong></em> La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[Papel]]></dcterms:format>
    <dcterms:extent><![CDATA[55 p.]]></dcterms:extent>
    <dcterms:language><![CDATA[Espa&ntilde;ol]]></dcterms:language>
    <dcterms:type><![CDATA[Tesis]]></dcterms:type>
    <dcterms:identifier><![CDATA[TM 541.481 MOM.]]></dcterms:identifier>
    <dcterms:coverage><![CDATA[Uruguay]]></dcterms:coverage>
</rdf:Description><rdf:Description rdf:about="https://riquim.fq.edu.uy/items/show/170">
    <dcterms:title><![CDATA[<strong>Bismuthy tri-iodide nanoparticles synthesized from octadecene suspension</strong>]]></dcterms:title>
    <dcterms:subject><![CDATA[SEMICONDUCTORES]]></dcterms:subject>
    <dcterms:subject><![CDATA[BISMUTO]]></dcterms:subject>
    <dcterms:subject><![CDATA[IMAGENES DIGITALES]]></dcterms:subject>
    <dcterms:subject><![CDATA[BIBLIOGRAFIA NACIONAL QUIMICA]]></dcterms:subject>
    <dcterms:subject><![CDATA[2012]]></dcterms:subject>
    <dcterms:abstract><![CDATA[<p>BiI3 is a semiconductor layered compound of growing interest for direct and digital imaging. This structure determines that bismuth tri-iodide crystals can grow with platelet habit. Thereby, we consider of great importance to study if such structure can determine nanoparticles of this material as well, that means, if such layers can be rolled in order to form nanotubes and/or nanorods. In light of this, the present work reports the synthesis of bismuth tri-iodide nanoparticles by the suspension method. Bi(NO3)3.5H2O, I2 and KI were used as source materials, and 1-octadecene was used as suspension agent. The intermediate and final synthesized compounds were characterized by Xray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Results clearly show that BiI3 nanoparticles can be synthesized by the suspension method, which means that the layer structure of these compounds can determine the growth of nanostructures. Nanoparticles of different sizes and morphologies were obtained, depending on the synthesis conditions. There has been not possible to control such conditions in order to obtain uniform size and morphology distributions. The use of these nanostructures may be an interesting way of improving nucleation and further growth of bismuth tri-iodide films</p>]]></dcterms:abstract>
    <dcterms:creator><![CDATA[<a title="Curriculum Vitae" href="http://buscadores.anii.org.uy/buscador_sni/exportador/ExportarPdf?hash=57120ffca5d4794ebfd9aaf2b87cc362" target="_blank"><strong>Aguiar, Ivana</strong></a>]]></dcterms:creator>
    <dcterms:creator><![CDATA[<a title="Curriculum Vitae" href="http://buscadores.anii.org.uy/buscador_sni/exportador/ExportarPdf?hash=7b9bf747fb311cff42d0d079ef90c05f" target="_blank"><strong>Fornaro, Laura</strong></a>]]></dcterms:creator>
    <dcterms:source><![CDATA[Materials Research Society Symposium Proceedings v. 1409, 2012. -- Disponible en l&iacute;nea]]></dcterms:source>
    <dcterms:publisher><![CDATA[Materials Research Society]]></dcterms:publisher>
    <dcterms:publisher><![CDATA[Cambridge Journals]]></dcterms:publisher>
    <dcterms:date><![CDATA[2012]]></dcterms:date>
    <dcterms:rights><![CDATA[<p><strong>Informaci&oacute;n sobre Derechos de Autor</strong></p>
<p>(Por favor lea este aviso antes de abrir los documentos u objetos)</p>
<p><strong>La legislaci&oacute;n uruguaya</strong> protege el derecho de autor sobre toda creaci&oacute;n literaria, cient&iacute;fica o art&iacute;stica, tanto en lo que tiene que ver con sus derechos morales, como en lo referente a los derechos patrimoniales con sujeci&oacute;n a lo establecido por el derecho com&uacute;n y las siguientes leyes</p>
<p>(LEY 9.739 DE 17 DE DICIEMBRE DE 1937 SOBRE PROPIEDAD LITERARIA Y ARTISTICA CON LAS MODIFICACIONES INTRODUCIDAS POR LA LEY DE DERECHO DE AUTOR Y DERECHOS CONEXOS No. 17.616 DE 10 DE ENERO DE 2003, LEY 17.805 DE 26 DE AGOSTO DE 2004, LEY 18.046 DE 24 DE OCTUBRE DE 2006 LEY 18.046 DE 24 DE OCTUBRE DE 2006)</p>
<p><strong>ADVERTENCIA</strong> - La consulta de este documento queda condicionada a la aceptaci&oacute;n de las siguientes condiciones de uso: Este documento es &uacute;nicamente para usos privados enmarcados en actividades de investigaci&oacute;n y docencia. No se autoriza su reproducci&oacute;n con fines de lucro. Esta reserva de derechos afecta tanto los datos del documento como a sus contenidos. En la utilizaci&oacute;n o cita de partes debe indicarse el nombre de la persona autora.</p>
<p>&nbsp;</p>]]></dcterms:rights>
    <dcterms:format><![CDATA[PDF]]></dcterms:format>
    <dcterms:language><![CDATA[Ingl&eacute;s]]></dcterms:language>
    <dcterms:type><![CDATA[Comunicaci&oacute;n de Congreso]]></dcterms:type>
    <dcterms:identifier><![CDATA[DOI: 10.1557/opl.2012.779]]></dcterms:identifier>
</rdf:Description></rdf:RDF>
