Comparison between sublimation and evaporation as process for growing lead iodide polycristalline films.

MICROSCOPIA

FUERZA ATOMICA

YODURO DE MERCURIO

BIBLIOGRAFIA NACIONAL QUIMICA

LIBROS-ANALITICA

2001

Polycrystalline films were grown by physical vapor deposition using lead iodide purified by evaporation as starting material. Purity and stoichiometry of starting material were determined by Inductively Coupled Plasma and wet procedures. Palladium film was thermal deposited as rear contact onto glass and alumina substrates 5x5 cm2 in size. Onto it, lead iodide films were grown by evaporation with source temperatures from 430 to 450 degree(s)C in a 500 mmHg Argon atmosphere. Substrate temperature were from 200 to 250 degree(s)C and deposition times from 2 to 10 days. Film thickness was measured by 59.5 keV (241Am) emission absorption, resulting values up to 50micrometers . The films were characterized by optical and atomic force microscopy, giving an average grain size up to 2micrometers . Film's low temperature photoluminescence confirmed the purity of the starting material. X-ray diffraction measurements of film's reflections show an intensity relation [(Sigma) I(0 0 l)] / [(Sigma) I(h k l)] from 0.2 to 0.9 that correlates to the film deposition temperature. For determining electrical and spectrometric properties, front palladium thermal deposition contacts and acrylic encapsulation were done onto the lead iodide films. Apparent resistivities from 1012 to 1015 (Omega) .cm and current densities in the order of 6 pA/cm2 (50 V) were determined. X-ray film response and uniformity was checked by irradiating with an X-ray medical equipment. Film properties and performance were correlated with starting material and substrate temperature, with previous results for lead iodide films grew by other methods and with similar results for mercuric iodide films.

Hard X-Ray and Gamma-Ray Detector Physics III / R. B. James, ed. v. 4507, 2001. -- p. 99-107 Proceedings of the Society of Photo-Optical instrumentation engineers(SPIE).

SPIE

2001

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doi:10.1117/12.450746

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