Bismuth Tri-Iodide Polycrystalline Films for Digital X-Ray Radiography Applications

IMAGENES DIGITALES

BISMUTO

FISICA

BIBLIOGRAFIA NACIONAL QUIMICA

2004

Abstract—Bismuth tri-iodide polycrystalline films were grown by the physical vapor deposition method. Glass 1 1 in size was used as the substrate. Palladium was deposited previously onto the substrates as the rear contact. For growth, bismuth tri-iodide 99.999% was heated at 130–170 C under high vacuum atmosphere (5 10 5 mmHg) or under Ar pressure for 20 hours. Film thickness was measured by the transmission of 59.5 keV 241Am emission, giving values ranging from 90 to 130 m (5%). Film grain size was measured by scanning electron microscopy, and it gave an average of (50 20) m. Detectors were made with the films by depositing palladium as the front contact (contact area 4 mm2) and then performing acrylic encapsulation. Resistivities of 61012.cm and current densities of 240 pA/cm2 at 20 V were obtained for these detectors. The electron mobility and lifetime and the electron mobility-lifetime product were measured by the transient charge technique, which gave values of 4.4 cm2/V.s, 3 310 7s and 1 4 10 6 cm2/V respectively. X-ray film response was checked by irradiating the films with a 241Am source and with an X-ray beam, for different beam energies and intensities and for several bias voltages applied to the detector. A linear response with exposure rate was obtained. Finally, the results were compared with previous ones for monocrystals of bismuth triiodide and polycrystalline films of alternative materials like lead iodide and mercuric iodide.

Saucedo, E.

Mussio, L.

Gancharov, A.

IEEE Transactions on Nuclear Science v. 51, n°1, 2004. -- p. 96-100

IEEE

2004

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